Specification	SSM3J372R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V, -6 V
Vgs(th) (Max) @ Id	1.2 V

SSM3J372R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F

Part	Package / Case	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Grade	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature	Qualification	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs (Max)
Toshiba Semiconductor and Storage SSM3J372R,LXHF	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	1.2 V	SOT-23F	42 mOhm	Automotive	P-Channel	Surface Mount	560 pF	30 V	6 A	1.8 V 10 V	1 W	150 °C	AEC-Q101	-12 V	6 V
Toshiba Semiconductor and Storage SSM3J372R,LF	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	1.2 V	SOT-23F	42 mOhm		P-Channel	Surface Mount	560 pF	30 V	6 A	1.8 V 10 V	1 W	150 °C				-6 V 12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F

Technical documentation and resources