High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -6.0 A, 0.042 Ω@10V, SOT-23F
| Part | Package / Case | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | Grade | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature | Qualification | Vgs (Max) [Min] | Vgs (Max) [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | 1.2 V | SOT-23F | 42 mOhm | Automotive | P-Channel | Surface Mount | 560 pF | 30 V | 6 A | 1.8 V 10 V | 1 W | 150 °C | AEC-Q101 | -12 V | 6 V | |
 Toshiba Semiconductor and Storage | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | 1.2 V | SOT-23F | 42 mOhm | P-Channel | Surface Mount | 560 pF | 30 V | 6 A | 1.8 V 10 V | 1 W | 150 °C | -6 V 12 V |