Discrete Semiconductor Products

STF7NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.8 OHM TYP., 5 A MDMESH II POWER MOSFET IN TO-220FP PACKAGE

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DocumentsDatasheet STF7NM60N | Datasheet

Discrete Semiconductor Products

STF7NM60N

Active

STMicroelectronics

N-CHANNEL 600 V, 0.8 OHM TYP., 5 A MDMESH II POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet STF7NM60N | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF7NM60N

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-5 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF7NM60N Series

N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in TO-220FP package

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
STMicroelectronics STF7NM60N	Through Hole	900 mOhm	363 pF	600 V	N-Channel	14 nC	4 V	MOSFET (Metal Oxide)	TO-220FP	150 °C	20 W	TO-220-5 Full Pack	10 V	5 A	25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	772	$ 1.35
Newark	Each	1	$ 2.24
		10	$ 1.91
		100	$ 1.48
		500	$ 1.31
		1000	$ 1.14
		2500	$ 0.94
		10000	$ 0.90

Description

General part information

STF7NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.