STL15N60M2-EP
ActiveN-CHANNEL 600 V, 0.389 OHM TYP., 7 A MDMESH M2 EP POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
STL15N60M2-EP
ActiveN-CHANNEL 600 V, 0.389 OHM TYP., 7 A MDMESH M2 EP POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL15N60M2-EP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 590 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 55 W |
| Rds On (Max) @ Id, Vgs | 418 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1690 | $ 2.59 | |
Description
General part information
STL15N60M2-EP Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources