Discrete Semiconductor Products
STGW20NC60V
ActiveSTMicroelectronics
IGBT, 60 A, 1.8 V, 200 W, 600 V, TO-247, 3 PINS
Discrete Semiconductor Products
STGW20NC60V
ActiveSTMicroelectronics
IGBT, 60 A, 1.8 V, 200 W, 600 V, TO-247, 3 PINS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW20NC60V |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Gate Charge | 100 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 330 µJ, 220 µJ |
| Td (on/off) @ 25°C | 31 ns, 100 ns |
| Test Condition | 15 V, 3.3 Ohm, 20 A, 390 V |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW20NC60V Series
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.