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TL431BFDT-QR
Discrete Semiconductor Products

PMV13XNEAR

Active
Nexperia USA Inc.

TRANSISTOR MOSFET N-CHANNEL 20V 7.3A 3-PIN SOT23 T/R

TL431BFDT-QR
Discrete Semiconductor Products

PMV13XNEAR

Active
Nexperia USA Inc.

TRANSISTOR MOSFET N-CHANNEL 20V 7.3A 3-PIN SOT23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV13XNEAR
Current - Continuous Drain (Id) @ 25°C7.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]15 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds931 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)8.3 W
Power Dissipation (Max)610 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs15 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.13
Digi-Reel® 1$ 0.38
10$ 0.28
100$ 0.17
500$ 0.15
1000$ 0.13
N/A 1768$ 0.63
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.08
15000$ 0.08

Description

General part information

PMV13XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.