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20 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Grade | Mounting Type | Qualification | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 175 °C | -55 °C | TO-236AB | 7.3 A | 15 mOhm | 15 nC | 2.5 V 8 V | 8.3 W | 610 mW | MOSFET (Metal Oxide) | 931 pF | 12 V | SC-59 SOT-23-3 TO-236-3 | Automotive | Surface Mount | AEC-Q101 | 20 V | 1.3 V |