Specification	STD80N240K6

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	105 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STD80N240K6 Series

N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Part	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STD80N240K6	105 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	220 mOhm	Surface Mount	30 V	TO-252 (DPAK)	16 A	150 °C	-55 °C	N-Channel	25.9 nC	4 V	MOSFET (Metal Oxide)	1350 pF	800 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	71	$ 5.09
Newark	Each (Supplied on Cut Tape)	1	$ 6.89
		10	$ 5.35
		25	$ 5.32
		50	$ 4.78
		100	$ 4.23
		250	$ 3.99
		500	$ 3.75
		1000	$ 3.67

Description

General part information

STD80N240K6 Series

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.