STB170NF04
ActiveAUTOMOTIVE-GRADE N-CHANNEL 40 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN A D2PAK PACKAGE
STB170NF04
ActiveAUTOMOTIVE-GRADE N-CHANNEL 40 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN A D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB170NF04 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 9000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 5 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB170NF04 Series
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Documents
Technical documentation and resources