Discrete Semiconductor Products

MCACL120N10Y-TP

Active

INTERFACE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCACL120N10Y-TP

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	108 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)
Micro Commercial Components MCACL120N10YA-TP	116 W	-55 °C	150 °C	10 V	N-Channel	8-PowerTDFN	100 V	DFN5060	120 A	2.5 V	Surface Mount	65 nC	4400 pF	MOSFET (Metal Oxide)	4 mOhm	20 V
Micro Commercial Components MCACL120N10Y-TP	108 W	-55 °C	150 °C	10 V	N-Channel	8-PowerTDFN	100 V	DFN5060	120 A	4 V	Surface Mount	70 nC	4400 pF	MOSFET (Metal Oxide)	4.2 mOhm	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	20000	$ 1.03

General part information

N-Channel 100 V 120A 108W Surface Mount DFN5060

Technical documentation and resources

No documents available