Discrete Semiconductor Products

SISS61DN-T1-GE3

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MOSFET P-CH 20V 30.9/111.9A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 20V 30.9/111.9A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS61DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	30.9 A, 111.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	231 nC
Input Capacitance (Ciss) (Max) @ Vds	8740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	65.8 W, 5 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISS61DN-T1-GE3	20 V	PowerPAK® 1212-8S	231 nC	MOSFET (Metal Oxide)	5 W 65.8 W	3.5 mOhm	8740 pF	-55 °C	150 °C	1.8 V 4.5 V	P-Channel	Surface Mount	900 mV	30.9 A 111.9 A	PowerPAK® 1212-8S	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources