SISS61 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 30.9/111.9A PPAK
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | PowerPAK® 1212-8S | 231 nC | MOSFET (Metal Oxide) | 5 W 65.8 W | 3.5 mOhm | 8740 pF | -55 °C | 150 °C | 1.8 V 4.5 V | P-Channel | Surface Mount | 900 mV | 30.9 A 111.9 A | PowerPAK® 1212-8S | 8 V |