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SOT23
Discrete Semiconductor Products

2N7002AK-QR

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Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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SOT23
Discrete Semiconductor Products

2N7002AK-QR

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification2N7002AK-QR
Current - Continuous Drain (Id) @ 25°C240 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.21 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]320 mW
QualificationAEC-Q101
Supplier Device PackageSOT-23-3 (TO-236), TO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.13
100$ 0.07
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.19
10$ 0.13
100$ 0.07
500$ 0.05
1000$ 0.04
N/A 3335$ 0.17
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
30000$ 0.02
75000$ 0.02
150000$ 0.02

Description

General part information

2N7002AK-Q Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.