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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Mounting Type | Vgs (Max) [Max] | Grade | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SOT-23-3 (TO-236) TO-236AB | Surface Mount | 20 V | Automotive | MOSFET (Metal Oxide) | 60 V | 320 mW | N-Channel | 5 V 10 V | 175 °C | 240 mA | 0.21 nC | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 |