Discrete Semiconductor Products

GHXS050A060S-D3

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 600V 50A

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Discrete Semiconductor Products

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 600V 50A

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS050A060S-D3

Current - Average Rectified (Io) (per Diode)	50 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Speed	500 ns, 200 mA
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Technology	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
SemiQ GHXS050A170S-D3	500 mA	175 ░C	-55 °C	750 µA	2 Independent	150 A	1.9 V	SOT-227-4 miniBLOC	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	1700 V
SemiQ GHXS050B065S-D3	500 mA	175 ░C	-55 °C	125 µA	2 Independent	95 A		SOT-227-4 miniBLOC	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	650 V	1.6 V	0 ns
SemiQ GHXS050A060S-D3	200 mA 500 ns	175 ░C	-55 °C	100 µA	2 Independent	50 A	1.8 V	SOT-227-4 miniBLOC	SiC (Silicon Carbide) Schottky	Chassis Mount	SOT-227	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 26.39
	Tube	25	$ 40.00
Mouser	N/A	1	$ 25.66
		10	$ 19.21
		100	$ 16.07

General part information

Diode Array 2 Independent 600 V 50A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources