Specification	PBRN113ZT,215

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	500
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	TO-236AB
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	1.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PBRN113 Series

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Package / Case	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]
Nexperia USA Inc. PBRN113ET,215	1.15 V	NPN - Pre-Biased	250 mW	TO-236AB	Surface Mount	500 nA	1 kOhms	SC-59 SOT-23-3 TO-236-3	600 mA	1 kOhm	180	40 V
Nexperia USA Inc. PBRN113ZT,215	1.15 V	NPN - Pre-Biased	250 mW	TO-236AB	Surface Mount	500 nA	1 kOhms	SC-59 SOT-23-3 TO-236-3	600 mA	10 kOhms	500	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources