Discrete Semiconductor Products

APT60M80L2VRG

Active

MOSFET N-CH 600V 65A 264 MAX

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 600V 65A 264 MAX

Technical Specifications

Parameters and characteristics for this part

Specification	APT60M80L2VRG

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	590 nC
Input Capacitance (Ciss) (Max) @ Vds	13300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	833 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	264 MAX™ [L2]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id
Microchip Technology APT60M80L2VRG	80 mOhm	N-Channel	Through Hole	600 V	264 MAX™ [L2]	13300 pF	10 V	590 nC	-55 °C	150 °C	833 W	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	65 A	30 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	20	$ 43.09

General part information

N-Channel 600 V 65A (Tc) 833W (Tc) Through Hole 264 MAX™ [L2]

Technical documentation and resources

No documents available