Discrete Semiconductor Products

PHT6N06LT,135

Obsolete

MOSFET N-CH 55V 2.5A SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 2.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	PHT6N06LT,135

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	4.5 nC
Input Capacitance (Ciss) (Max)	330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-261AA, TO-261-4
Package Name	SC-73
Power Dissipation (Max)	8.3 W, 1.8 W
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	13 V
Vgs(th) (Max)	2 V

Part	Current - Continuous Drain (Id) (Tc)	FET Type	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Rds On (Max)	Mounting Type	Gate Charge (Max)	Package / Case	Package Name	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)
NXP USA Inc. PHT6N06T,135	5.5 A	N-Channel	8.3 W	MOSFET (Metal Oxide)	175 pF	-55 °C	150 °C	4 V	150 mOhm	Surface Mount	5.6 nC	TO-261-4 TO-261AA	SC-73	55 V	10 V	20 V
NXP USA Inc. PHT6N06LT,135		N-Channel	1.8 W 8.3 W	MOSFET (Metal Oxide)	330 pF	-55 °C	150 °C	2 V	150 mOhm	Surface Mount	4.5 nC	TO-261-4 TO-261AA	SC-73	55 V	5 V	13 V	2.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 55 V 2.5A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73

Technical documentation and resources

No documents available