Discrete Semiconductor Products

PHT6N06LT,135

Obsolete

MOSFET N-CH 55V 2.5A SOT223

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 2.5A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	PHT6N06LT,135

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	8.3 W, 1.8 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	SC-73
Technology	MOSFET (Metal Oxide)
Vgs (Max)	13 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PHT6N06T,135	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	5.5 A	Surface Mount	-55 °C	150 °C	N-Channel	10 V	55 V	20 V	175 pF	5.6 nC	150 mOhm	8.3 W	SC-73
Freescale Semiconductor - NXP PHT6N06LT,135	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	2.5 A	Surface Mount	-55 °C	150 °C	N-Channel	5 V	55 V	13 V	330 pF		150 mOhm		SC-73	4.5 nC	1.8 W 8.3 W	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 2.5A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73

Technical documentation and resources

No documents available