PHT6 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET N-CH 55V 5.5A SOT223
| Part | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 5.5 A | Surface Mount | -55 °C | 150 °C | N-Channel | 10 V | 55 V | 20 V | 175 pF | 5.6 nC | 150 mOhm | 8.3 W | SC-73 | |||
Freescale Semiconductor - NXP | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 2.5 A | Surface Mount | -55 °C | 150 °C | N-Channel | 5 V | 55 V | 13 V | 330 pF | 150 mOhm | SC-73 | 4.5 nC | 1.8 W 8.3 W | 2 V |