PHT6 Series
Manufacturer: NXP USA Inc.
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MOSFET N-CH 55V 5.5A SOT223
| Part | Current - Continuous Drain (Id) (Tc) | FET Type | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Rds On (Max) | Mounting Type | Gate Charge (Max) | Package / Case | Package Name | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 5.5 A | N-Channel | 8.3 W | MOSFET (Metal Oxide) | 175 pF | -55 °C | 150 °C | 4 V | 150 mOhm | Surface Mount | 5.6 nC | TO-261-4 TO-261AA | SC-73 | 55 V | 10 V | 20 V | |
 NXP USA Inc. | N-Channel | 1.8 W 8.3 W | MOSFET (Metal Oxide) | 330 pF | -55 °C | 150 °C | 2 V | 150 mOhm | Surface Mount | 4.5 nC | TO-261-4 TO-261AA | SC-73 | 55 V | 5 V | 13 V | 2.5 A |