SQJ456EP-T2_GE3

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MOSFET N-CH 100V 32A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 100V 32A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ456EP-T2_GE3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3342 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SQJ456EP-T1_GE3	Automotive	AEC-Q101	6 V 10 V	63 nC	100 V	Surface Mount	3342 pF	32 A	PowerPAK® SO-8	N-Channel	20 V	3.5 V	26 mOhm	83 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SQJ456EP-T2_GE3	Automotive	AEC-Q101	6 V 10 V	63 nC	100 V	Surface Mount	3342 pF	32 A	PowerPAK® SO-8	N-Channel	20 V	3.5 V	26 mOhm	83 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	PowerPAK® SO-8

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General part information

N-Channel 100 V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources