SQJ456 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 32A PPAK SO-8
| Part | Grade | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Automotive | AEC-Q101 | 6 V 10 V | 63 nC | 100 V | Surface Mount | 3342 pF | 32 A | PowerPAK® SO-8 | N-Channel | 20 V | 3.5 V | 26 mOhm | 83 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | PowerPAK® SO-8 |
Vishay General Semiconductor - Diodes Division | Automotive | AEC-Q101 | 6 V 10 V | 63 nC | 100 V | Surface Mount | 3342 pF | 32 A | PowerPAK® SO-8 | N-Channel | 20 V | 3.5 V | 26 mOhm | 83 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | PowerPAK® SO-8 |