Discrete Semiconductor Products

STH47N60DM6-2AG

Obsolete

POWER TRANSISTORS

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

Specification	STH47N60DM6-2AG

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Grade	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STH47N60DM6-2AG	80 mOhm	150 °C	-55 °C	N-Channel	10 V	250 W	600 V	Surface Mount	4.75 V	MOSFET (Metal Oxide)	55 nC	25 V	Automotive	H2Pak-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2350 pF	AEC-Q101	36 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.71

General part information

N-Channel 600 V 36A (Tc) 250W (Tc) Surface Mount H2PAK-2

Technical documentation and resources