Discrete Semiconductor Products

SIR680DP-T1-RE3

Active

MOSFET N-CH 80V 100A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 80V 100A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR680DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	81 nC
Input Capacitance (Ciss) (Max) @ Vds	5150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SIR680DP-T1-RE3	80 V	20 V	10 V	7.5 V	3.4 V	5150 pF	MOSFET (Metal Oxide)	104 W	81 nC	N-Channel	PowerPAK® SO-8	100 A	Surface Mount	2.9 mOhm	-55 °C	150 °C	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources