SIR680 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 80V 100A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 80 V | 20 V | 10 V | 7.5 V | 3.4 V | 5150 pF | MOSFET (Metal Oxide) | 104 W | 81 nC | N-Channel | PowerPAK® SO-8 | 100 A | Surface Mount | 2.9 mOhm | -55 °C | 150 °C | PowerPAK® SO-8 |