Discrete Semiconductor Products
MD2001FX
ActiveSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR STANDARD DEFINITION CRT DISPLAY
Discrete Semiconductor Products
MD2001FX
ActiveSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR STANDARD DEFINITION CRT DISPLAY
Technical Specifications
Parameters and characteristics for this part
| Specification | MD2001FX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 4.5 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | ISOWATT218FX |
| Supplier Device Package | ISOWATT-218FX |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 700 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4041 | $ 3.48 | |
Description
General part information
MD2001FX Series
The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Documents
Technical documentation and resources