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STL8N10LF3
Discrete Semiconductor Products

STL8N10LF3

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 100 V, 25 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

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STL8N10LF3
Discrete Semiconductor Products

STL8N10LF3

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 100 V, 25 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL8N10LF3
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]970 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)4.3 W, 70 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4450$ 1.96
MouserN/A 1$ 2.11
10$ 1.53
25$ 1.46
100$ 1.09
500$ 0.92
1000$ 0.85
3000$ 0.77
6000$ 0.77

Description

General part information

STL8N10LF3 Series

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.