JAN1N3646

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DIODE GP 1.75KV 250MA S AXIAL

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Discrete Semiconductor Products

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DIODE GP 1.75KV 250MA S AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N3646

Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	5 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	S, Axial
Qualification	MIL-PRF-19500/279
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	S, Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1750 V
Voltage - Forward (Vf) (Max) @ If	5 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Package / Case	Grade	Qualification
Microchip Technology 1N3646	175 ░C	-65 C	1750 V	Standard	100 µA	250 mA	S Axial	Through Hole	5 V	Standard Recovery >500ns	200 mA	Axial S
Microchip Technology JAN1N3646	175 ░C	-65 C	1750 V	Standard	5 µA	250 mA	S Axial	Through Hole	5 V	Standard Recovery >500ns	200 mA	Axial S	Military	MIL-PRF-19500/279

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 14.10

General part information

Diode 1750 V 250mA Through Hole S, Axial

Technical documentation and resources