Discrete Semiconductor Products
STW20N95DK5
ActiveSTMicroelectronics
N-CHANNEL 950 V, 275 MOHM TYP., 18 A MDMESH DK5 POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW20N95DK5
ActiveSTMicroelectronics
N-CHANNEL 950 V, 275 MOHM TYP., 18 A MDMESH DK5 POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW20N95DK5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 50.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) @ Id, Vgs | 330 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW20N95DK5 Series
These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.
Documents
Technical documentation and resources