
Discrete Semiconductor Products
VB20120SG-M3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO263AB
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Discrete Semiconductor Products
VB20120SG-M3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO263AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VB20120SG-M3/4W |
|---|---|
| Current - Reverse Leakage @ Vr | 250 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-263AB (D2PAK) |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 8000 | $ 0.52 | |
Description
General part information
VB20120 Series
Diode 120 V 20A Surface Mount TO-263AB (D2PAK)
Documents
Technical documentation and resources