VB20120 Series

Catalog

DIODE SCHOTTKY 120V 20A TO263AB

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Vishay General Semiconductor - Diodes Division VB20120SG-E3/8W	Schottky	150 °C	-40 °C	200 mA 500 ns	Surface Mount	250 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V
Vishay General Semiconductor - Diodes Division VB20120S-E3/4W	Schottky	150 °C	-40 °C	200 mA 500 ns	Surface Mount	300 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V	1.12 V
Vishay General Semiconductor - Diodes Division VB20120C-M3/8W	Schottky	150 °C	-40 °C	200 mA 500 ns	Surface Mount	700 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V	900 mV	10 A	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VB20120C-E3/8W	Schottky	150 °C	-40 °C	200 mA 500 ns	Surface Mount	700 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V	900 mV	10 A	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VB20120C-M3/4W	Schottky	150 °C	-40 °C	200 mA 500 ns	Surface Mount	700 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V	900 mV	10 A	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VB20120SG-M3/4W	Schottky	150 °C	-55 °C	200 mA 500 ns	Surface Mount	250 µA	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 V