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BA17818FP-E2

Discrete Semiconductor Products

RD3U080AAFRATL

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Rohm Semiconductor

250V 8A TO-252, AUTOMOTIVE POWER MOSFET

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Search across all available documentation for this part.

DocumentsNotes for Calculating Power Consumption:Static Operation Calculation of Power Dissipation in Switching Circuit +41

BA17818FP-E2

Discrete Semiconductor Products

RD3U080AAFRATL

Active

Rohm Semiconductor

250V 8A TO-252, AUTOMOTIVE POWER MOSFET

Deep-Dive with AI

DocumentsNotes for Calculating Power Consumption:Static Operation Calculation of Power Dissipation in Switching Circuit +41

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3U080AAFRATL

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1440 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.95
		10	$ 1.91
		100	$ 1.32
		500	$ 1.07
		1000	$ 0.99
	Digi-Reel®	1	$ 2.95
		10	$ 1.91
		100	$ 1.32
		500	$ 1.07
		1000	$ 0.99
	N/A	3899	$ 2.28
	Tape & Reel (TR)	2500	$ 0.90
		5000	$ 0.89
Mouser	N/A	1	$ 2.24
		10	$ 1.53
		100	$ 1.17
		500	$ 0.97
		1000	$ 0.94
		2500	$ 0.88
		5000	$ 0.84

Description

General part information

RD3U080 Series

RD3U080CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Documents

Technical documentation and resources

Notes for Calculating Power Consumption:Static Operation

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

Types and Features of Transistors

Application Note

Measurement Method and Usage of Thermal Resistance RthJC

Moisture Sensitivity Level - Transistors

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

θ<sub>JA</sub> and Ψ<sub>JT</sub>

List of Transistor Package Thermal Resistance

Condition of Soldering / Land Pattern Reference

Package Information

TO-252_TL Taping Information

Package Information

Inner Structure

Package Information

Anti-Whisker formation - Transistors

Package Information

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

RD3U080AAFRA Data Sheet

PCB Layout Thermal Design Guide

Precautions When Measuring the Rear of the Package with a Thermocouple

Judgment Criteria of Thermal Evaluation

Explanation for Marking

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

What is a Thermal Model? (Transistor)

About Flammability of Materials

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

About Export Regulations

Export Information

Part Explanation

Application Note

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

How to Use LTspice® Models

Schematic Design & Verification

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Report of SVHC under REACH Regulation

Environmental Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Two-Resistor Model for Thermal Simulation

What Is Thermal Design

Package Dimensions

Package Information

RD3U080 Series

250V 8A TO-252, Automotive Power MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Grade	Qualification	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]
Rohm Semiconductor RD3U080AAFRATL	TO-252	8 A	250 V	1440 pF	85 W	30 V	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	AEC-Q101	150 °C	Surface Mount	25 nC	10 V	N-Channel	300 mOhm	MOSFET (Metal Oxide)
Rohm Semiconductor RD3U080CNTL1	TO-252	8 A	250 V	1440 pF	85 W	30 V	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3				Surface Mount	25 nC	10 V	N-Channel	300 mOhm	MOSFET (Metal Oxide)	150 °C	-55 °C