Discrete Semiconductor Products

GP3D005A170B

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DIODE SIL CARB 1.7KV 21A TO247-2

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Discrete Semiconductor Products

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DIODE SIL CARB 1.7KV 21A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D005A170B

Capacitance @ Vr, F	347 pF
Current - Average Rectified (Io)	21 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.65 V

Part	Package / Case	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F
SemiQ GP3D005A170B	TO-247-2	0 ns	SiC (Silicon Carbide) Schottky	1700 V	500 mA	Through Hole	21 A	TO-247-2	20 µA	1.65 V	175 ░C	-55 °C	347 pF

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General part information

Diode 1700 V 21A Through Hole TO-247-2

Technical documentation and resources