Specification	STL130N6F7

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	125 W, 4.8 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STL130N6F7 Series

N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STL130N6F7	3.5 mOhm	4 V	PowerFlat™ (5x6)	Surface Mount	4.8 W 125 W	130 A	60 V	N-Channel	8-PowerVDFN	20 V	2600 pF	175 °C	-55 °C	42 nC	MOSFET (Metal Oxide)	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7510	$ 1.63
Newark	Each (Supplied on Cut Tape)	1	$ 2.49
		10	$ 1.91
		25	$ 1.80
		50	$ 1.68
		100	$ 1.57
		250	$ 1.56
		500	$ 1.40
		1000	$ 1.35

Description

General part information

STL130N6F7 Series

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.