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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD40N2LH5

Obsolete
STMicroelectronics

MOSFET N-CH 25V 40A DPAK

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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD40N2LH5

Obsolete
STMicroelectronics

MOSFET N-CH 25V 40A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD40N2LH5
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.3 nC
Input Capacitance (Ciss) (Max) @ Vds700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs11.8 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)22 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

STD40 Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources