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ITO220AB
Discrete Semiconductor Products

TSM4NB60CI C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFETS 600V, 4A, SINGLE N-CHANNEL POWER MOSFET

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ITO220AB
Discrete Semiconductor Products

TSM4NB60CI C0G

Obsolete
Taiwan Semiconductor Corporation

MOSFETS 600V, 4A, SINGLE N-CHANNEL POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM4NB60CI C0G
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14.5 nC
Input Capacitance (Ciss) (Max) @ Vds500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageITO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.48
MouserN/A 1$ 1.27
10$ 1.05
100$ 0.82
500$ 0.69
1000$ 0.56
2000$ 0.53
4000$ 0.53

Description

General part information

TSM4NB60 Series

N-Channel 600 V 4A (Tc) 50W (Tc) Through Hole ITO-220AB

Documents

Technical documentation and resources

No documents available