TSM4NB60 Series

Catalog

MOSFET N-CH 600V 4A TO251

Part	Package / Case	Supplier Device Package	Supplier Device Package	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C
Taiwan Semiconductor Corporation TSM4NB60CH C5G	IPAK TO-251-3 Short Leads TO-251AA	IPAK	TO-251	MOSFET (Metal Oxide)	30 V	4.5 V	600 V	2.5 Ohm	N-Channel	Through Hole	14.5 nC	50 W	500 pF	10 V	150 °C	-55 °C	4 A
Taiwan Semiconductor Corporation TSM4NB60CP ROG	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	MOSFET (Metal Oxide)	30 V	4.5 V	600 V	2.5 Ohm	N-Channel	Surface Mount	14.5 nC	50 W	500 pF	10 V	150 °C	-55 °C	4 A
Taiwan Semiconductor Corporation TSM4NB60CI C0G	TO-220-3 Full Pack Isolated Tab		ITO-220AB	MOSFET (Metal Oxide)	30 V	4.5 V	600 V	2.5 Ohm	N-Channel	Through Hole	14.5 nC	50 W	500 pF	10 V	150 °C	-55 °C	4 A