Discrete Semiconductor Products

IRFD220

Obsolete

MOSFET N-CH 200V 800MA 4DIP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 800MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD220

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Vishay General Semiconductor - Diodes Division IRFD220	800 mA	200 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	1 W	4 V	800 mOhm	4-DIP (0.300" 7.62mm)	20 V	14 nC	260 pF	10 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	579	$ 0.52

General part information

N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources