IRFD220 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 200V 800MA 4DIP
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 800 mA | 200 V | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 1 W | 4 V | 800 mOhm | 4-DIP (0.300" 7.62mm) | 20 V | 14 nC | 260 pF | 10 V | Through Hole |