Discrete Semiconductor Products

PXN2R8-100RLJ

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N-CHANNEL 100 V, 2.8 MOHM, LOGIC LEVEL TRENCH MOSFET IN MLPAK56

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Discrete Semiconductor Products

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N-CHANNEL 100 V, 2.8 MOHM, LOGIC LEVEL TRENCH MOSFET IN MLPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PXN2R8-100RLJ

Current - Continuous Drain (Id) @ 25°C	184 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	181 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	MLPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Supplier Device Package
Nexperia USA Inc. PXN2R8-100RLJ	181 W	103 nC	2.2 V	2.8 mOhm	N-Channel	184 A	4.5 V 10 V	8-PowerTDFN	100 V	150 °C	-55 °C	20 V	6325 pF	Surface Mount	MOSFET (Metal Oxide)	MLPAK56

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2755	$ 3.58

General part information

General purpose MOSFET for standard applications, 184 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package.

Technical documentation and resources