N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56
N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56
N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 181 W | 103 nC | 2.2 V | 2.8 mOhm | N-Channel | 184 A | 4.5 V 10 V | 8-PowerTDFN | 100 V | 150 °C | -55 °C | 20 V | 6325 pF | Surface Mount | MOSFET (Metal Oxide) | MLPAK56 |