Discrete Semiconductor Products

SQ2318BES-T1_GE3

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MOSFET N-CH 40V 8A SOT23-3

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 40V 8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2318BES-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26.3 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Grade	Power Dissipation (Max) [Max]	Technology	Qualification	FET Type	Package / Case	Mounting Type	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SQ2318AES-T1_BE3	40 V	20 V	8 A	31 mOhm	553 pF	13 nC	4.5 V 10 V	-55 °C	175 ░C	SOT-23-3 (TO-236)	Automotive	3 W	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	SC-59 SOT-23-3 TO-236-3	Surface Mount	2.5 V
Vishay General Semiconductor - Diodes Division SQ2318BES-T1_GE3	40 V	20 V	8 A	26.3 mOhm	500 pF	9.4 nC	4.5 V 10 V	-55 °C	175 ░C	SOT-23-3 (TO-236)	Automotive	3 W	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	SC-59 SOT-23-3 TO-236-3	Surface Mount	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available