SQ2318 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 40V 8A SOT23-3
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Grade | Power Dissipation (Max) [Max] | Technology | Qualification | FET Type | Package / Case | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 V | 20 V | 8 A | 31 mOhm | 553 pF | 13 nC | 4.5 V 10 V | -55 °C | 175 ░C | SOT-23-3 (TO-236) | Automotive | 3 W | MOSFET (Metal Oxide) | AEC-Q101 | N-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 2.5 V |
Vishay General Semiconductor - Diodes Division | 40 V | 20 V | 8 A | 26.3 mOhm | 500 pF | 9.4 nC | 4.5 V 10 V | -55 °C | 175 ░C | SOT-23-3 (TO-236) | Automotive | 3 W | MOSFET (Metal Oxide) | AEC-Q101 | N-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 2.5 V |