Discrete Semiconductor Products

SIHFR430ATR-GE3

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MOSFET N-CH 500V 5A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 500V 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFR430ATR-GE3

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs [Max]	1.7 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHFR430ATRR-GE3	N-Channel	MOSFET (Metal Oxide)	Surface Mount	500 V	1.7 Ohm	TO-252AA	24 nC	10 V	5 A	30 V	4.5 V	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHFR430ATRL-GE3	N-Channel	MOSFET (Metal Oxide)	Surface Mount	500 V	1.7 Ohm	TO-252AA	24 nC	10 V	5 A	30 V	4.5 V	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHFR430ATR-GE3	N-Channel	MOSFET (Metal Oxide)	Surface Mount	500 V	1.7 Ohm	TO-252AA	24 nC	10 V	5 A	30 V	4.5 V	110 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C

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General part information

N-Channel 500 V 5A (Tc) 110W (Tc) Surface Mount TO-252AA

Technical documentation and resources