SIHFR430 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 5A DPAK
| Part | FET Type | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 500 V | 1.7 Ohm | TO-252AA | 24 nC | 10 V | 5 A | 30 V | 4.5 V | 110 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 500 V | 1.7 Ohm | TO-252AA | 24 nC | 10 V | 5 A | 30 V | 4.5 V | 110 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C |
Vishay General Semiconductor - Diodes Division | N-Channel | MOSFET (Metal Oxide) | Surface Mount | 500 V | 1.7 Ohm | TO-252AA | 24 nC | 10 V | 5 A | 30 V | 4.5 V | 110 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C |