STP26N65DM2
ActiveN-CHANNEL 650 V, 0.156 OHM TYP., 20 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE
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STP26N65DM2
ActiveN-CHANNEL 650 V, 0.156 OHM TYP., 20 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP26N65DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1480 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP26N65DM2 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources