
Discrete Semiconductor Products
FF600R12KE4BOSA1
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THE FF600R12KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 600 A.
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Discrete Semiconductor Products
FF600R12KE4BOSA1
ActiveINFINEON
THE FF600R12KE4 IS A DUAL IGBT4 - E4 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 600 A.
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Technical Specifications
Parameters and characteristics for this part
| Specification | FF600R12KE4BOSA1 |
|---|---|
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) [Max] | 600 A |
| Current - Collector Cutoff (Max) [Max] | 5 mA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 38 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 178.97 | |
| 10 | $ 167.63 | |||
| 30 | $ 161.33 | |||
Description
General part information
FF600R12 Series
62 mm1200 V, 600 A dual low sat& fast trenchIGBT modulewith TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.
Documents
Technical documentation and resources