Discrete Semiconductor Products

TSM100N06CZ C0G

Obsolete

MOSFET N-CHANNEL 60V 100A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL 60V 100A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM100N06CZ C0G

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4382 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	6.7 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Technology	Vgs (Max)
Taiwan Semiconductor Corporation TSM100N06CZ C0G	TO-220-3	10 V	92 nC	167 W	150 °C	-55 °C	Through Hole	6.7 mOhm	4382 pF	4 V	100 A	60 V	TO-220	N-Channel	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.94

General part information

N-Channel 60 V 100A (Tc) 167W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available