TSM100 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 100A TO220
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Technology | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | TO-220-3 | 10 V | 92 nC | 167 W | 150 °C | -55 °C | Through Hole | 6.7 mOhm | 4382 pF | 4 V | 100 A | 60 V | TO-220 | N-Channel | MOSFET (Metal Oxide) | 20 V |