Discrete Semiconductor Products

FGH30N6S2D

Obsolete

ON Semiconductor

IGBT 600V 45A 167W TO247

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Discrete Semiconductor Products

FGH30N6S2D

Obsolete

ON Semiconductor

IGBT 600V 45A 167W TO247

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGH30N6S2D

Current - Collector (Ic) (Max) [Max]	45 A
Current - Collector Pulsed (Icm)	108 A
Gate Charge	23 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	167 W
Reverse Recovery Time (trr)	46 ns
Supplier Device Package	TO-247-3
Switching Energy	100 µJ, 55 µJ
Td (on/off) @ 25°C	6 ns, 40 ns
Test Condition	12 A, 15 V, 390 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGH30N60LSD Series

IGBT, 1500 V, 30 A Shorted-anode

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	IGBT Type	Gate Charge	Td (on/off) @ 25°C	Switching Energy	Test Condition	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
ON Semiconductor FGH30S130P	TO-247-3	60 A	TO-247-3	-55 °C	175 ░C	90 A	500 W	Through Hole	1300 V	2.3 V	Trench Field Stop	78 nC
ON Semiconductor FGH30S150P	TO-247-3	60 A	TO-247-3	-55 °C	175 ░C	90 A	500 W	Through Hole	1500 V	2.4 V		369 nC	32 ns 492 ns	1.16 mJ 900 µJ	10 Ohm 15 V 30 A 600 V
ON Semiconductor FGH30N60LSDTU	TO-247-3	60 A	TO-247-3	-55 °C	150 °C	90 A	480 W	Through Hole		1.4 V		225 nC	18 ns	1.1 mJ 21 mJ	6.8 Ohm 15 V 30 A 400 V	250 ns	600 V	35 ns
ON Semiconductor FGH30N6S2D	TO-247-3	45 A	TO-247-3	-55 °C	150 °C	108 A	167 W	Through Hole		2.5 V		23 nC		55 µJ 100 µJ	10 Ohm 12 A 15 V 390 V		600 V	46 ns	6 ns 40 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGH30N60LSD Series

Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

Documents

Technical documentation and resources