SI5458DU-T1-GE3

Active

MOSFET N-CH 30V 6A CHIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 6A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5458DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	10.4 W, 3.5 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI5458DU-T1-GE3	6 A	-55 °C	150 °C	325 pF	9 nC	PowerPAK® ChipFET™ Single	PowerPAK® ChipFET™ Single	4.5 V 10 V	20 V	3 V	N-Channel	41 mOhm	Surface Mount	3.5 W 10.4 W	MOSFET (Metal Oxide)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 6A (Tc) 3.5W (Ta), 10.4W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources